Datasheet FQH90N15 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQH90N15	N-Channel Power MOSFET / Transistor FQH90N15 / FQA90N15 N-Channel Power MOSFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximu	Fairchild Semiconductor

FQH90 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQH90N15	N-Channel Power MOSFET / Transistor FQH90N15 / FQA90N15 N-Channel Power MOSFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capabili	Fairchild Semiconductor
FQH90N10V2	100V N-Channel MOSFET FQH90N10V2 100V N-Channel MOSFET October 2005 QFET FQH90N10V2 100V N-Channel MOSFET Features • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capabil	Fairchild Semiconductor
FQH90N10V2	MOSFET ( Transistor ) FQH90N10V2 100V N-Channel MOSFET FQH90N10V2 100V N-Channel MOSFET Features • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maxi	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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