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Datasheet FQB3N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FQB3N60 | 600V N-Channel MOSFET FQB3N60 / FQI3N60
April 2000
QFET
FQB3N60 / FQI3N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim |
 Fairchild Semiconductor |
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| 1 | FQB3N60C | 600V N-Channel MOSFET FQB3N60C 600V N-Channel MOSFET
May 2006
QFET
FQB3N60C
600V N-Channel MOSFET Features
• 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
These N-Ch |
Fairchild Semiconductor |
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