FQA6N70 전자부품 데이터시트

FQA6N80 September 2000 QFET FQA6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state res



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FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant September 2007

FQA6N90C 900V N-Channel MOSFET QFET FQA6N90C 900V N-Channel MOSFET Features • • • • • • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ® Description These N