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Datasheet FQA10N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FQA10N80 | 800V N-Channel MOSFET FQA10N80
September 2000
QFET
FQA10N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r |
 Fairchild Semiconductor |
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| 2 | FQA10N80C | 800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET
September 2006
QFET
FQA10N80C
800V N-Channel MOSFET
Features
• • • • • • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability
®
Description
The |
Fairchild Semiconductor |
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| 1 | FQA10N80C_F109 | N-Channel QFET MOSFET FQA10N80C_F109 — N-Channel QFET® MOSFET
FQA10N80C_F109
N-Channel QFET® MOSFET
800 V, 10 A, 1.1 Ω
Features
• 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS compliant
March 2014
Descript |
Fairchild Semiconductor |
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