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Datasheet FMW10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FMW10 | High transition frequency (dual transistors) Transistors
EMX4 / UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4
!Features 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob |  ROHM Semiconductor | transistor |
FMW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FMW-2106 | Schottky Barrier Rectifier, Diode www.DataSheet.co.kr
http://www.sanken-ele.co.jp
SANKEN ELECTRIC FMW-2106
Schottky Barrier Rectifier
Mar. 2008
General Description
FMW-2106 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.
Package
TO220F(3Pin)
Applications ●DC-D  Sanken electric rectifier | | |
| 2 | FMW-2156 | Schottky Barrier Rectifier, Diode www.DataSheet.co.kr
http://www.sanken-ele.co.jp
SANKEN ELECTRIC FMW-2156
Schottky Barrier Rectifier
Mar. 2008
General Description
FMW-2106 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.
Package
TO220F(3Pin)
Applications ●DC-D Sanken electric rectifier | | |
| 3 | FMW-2206 | Schottky Barrier Rectifier, Diode www.DataSheet.co.kr
http://www.sanken-ele.co.jp
SANKEN ELECTRIC FMW-2206
Schottky Barrier Rectifier
Mar. 2008
General Description
FMW-2206 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.
Package
TO220F(3Pin)
Applications ●DC-D Sanken electric rectifier | | |
| 4 | FMW10 | High transition frequency (dual transistors) Transistors
EMX4 / UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4
!Features 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob ROHM Semiconductor transistor | | |
| 5 | FMW2 | General purpose
Transistors
EMW2 / EMX2 / EMX3 / UMW2N /UMX2N / UMX3N / FMW2 / IMX2 / IMX3
General purpose (dual transistors)
EMW2 / EMX2 / EMX3 / UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3
zFeatures 1) Two 2SC2412AK chips in a EMT or UMT or SMT package.
zEquivalent circuit
EMW2 / UMW2N
(3) ROHM Semiconductor data | | |
| 6 | FMW20N60S1HF | N-CHANNEL SILICON POWER MOSFET www.DataSheet.co.kr
http://www.fujielectric.com/products/semiconductor/
FMW20N60S1HF
Super J-MOS series
Features
Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg)
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Outline Drawings [mm]
TO-247-  Fuji Electric mosfet | | |
| 7 | FMW3 | General purpose (dual transistors) FMW3 / FMW4 / IMX8
Transistors
General purpose (dual transistors)
FMW3 / FMW4 / IMX8
!Features 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. !External dimensions (Units : mm)
0.95 0.95 1.9 2.9 0.8
0to0.1
(1)
!Absolute maximum ratings (Ta = 25°C)
Collector-base voltage Colle ROHM Semiconductor transistor | |
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