Datasheet FMMT634Q Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FMMT634Q	NPN DARLINGTON TRANSISTOR Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > 100V  IC = 900mA high Continuous Collector Current  ICM = 5A Peak Pulse Current  625mW Power dissipation  hFE > 5k up to 2A for high cu	Diodes

FMMT6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FMMT619	NPN SILICON POWER (SWITCHING) TRANSISTORS SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS ISSUE 3 - NOVEMBER 1995 FEATURES FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 * * * * * * 625mW POWER DISSIPATION IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Vol	Zetex Semiconductors
FMMT618	NPN SILICON POWER (SWITCHING) TRANSISTORS SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS ISSUE 3 - NOVEMBER 1995 FEATURES FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 * * * * * * 625mW POWER DISSIPATION IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Vol	Zetex Semiconductors
FMMT617	NPN SILICON POWER (SWITCHING) TRANSISTORS SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS ISSUE 3 - NOVEMBER 1995 FEATURES FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 * * * * * * 625mW POWER DISSIPATION IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Vol	Zetex Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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