FMMT620TA
Zetex Semiconductors
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTORFMMT620
SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A
DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Use
FMMT620TC
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTORFMMT620
SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A
DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very l
Zetex Semiconductors
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FMMT620
NPN SILICON LOW SATURATION TRANSISTORA Product Line of Diodes Incorporated
FMMT620
80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
Features
• BVCEO > 80V • IC = 1.5A Continuous Collector Current • RCE(SAT) = 90mΩ for a low equivalent On-Resistance • 625mW Power dissipation • hFE specified up to 5A for high current gain
Diodes
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FMMT620
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTORFMMT620
SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A
DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very l
Zetex Semiconductors
PDF