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Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation hFE > 5k up to 2A for high cu
Features • BVCEO > 100V • IC = 900mA high Continuous Collector Current • ICM = 5A Peak Pulse Current • 625mW Power dissipation • hFE > 5k up to 2A for high current gain hold up • Complementary PNP Type: FMMT734 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and An
FMMT620 SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very l
A Product Line of Diodes Incorporated FMMT6520 350V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits • BVCEO > -350V • Maximum Continuous Collector Current IC = -500mA • 330mW power dissipation • Complementary part number FMMT6517 • Lead Free, RoHS Compliant (Note
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 NOVEMBER 1995 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA 7 FMMT6517 E C B APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE PARTMARKING DETAIL FMMT6520 517 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER
SMD Type Transistors Power Darlington Transistor FMMT634 Features 625mW power dissipation Highest current capability SOT23 darlington Very high hFE +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm
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PartNumber.co.kr | 2020 | 연락처 |