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FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC(cont) = 1A PD = 500mW RCE(sat) = 160m⍀ at 1A Complementary part number : FMMT591 Description Medium power planar NPN bipolar transistor. Features • VCE(sat) maximum specification improvement • Reverse blocking spec
Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BVCEO > 60V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance 500mW Power Dis
Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BVCEO > 60V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance 500mW Power Dis
Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BVCEO > 60V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance 500mW Power Dis
A Product Line of Diodes Incorporated FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE chara
A Product Line of Diodes Incorporated FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature • BVCEO > 40V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a low equivalent On-Resistance • 500mW Power Dissipation • hFE chara
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