FMBA14
Fairchild Semiconductor
NPN Multi-Chip Darlington TransistorFMBA14
Discrete POWER & Signal Technologies
FMBA14
C2 E1 C1
B2 E2
pin #1 B1
SuperSOT™-6
Mark: .1N
NPN Multi-Chip Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced
FMBA56
PNP Multi-Chip General Purpose AmplifierFMBA56
Discrete POWER & Signal Technologies
FMBA56
C2 E1 C1
B2 E2
pin #1 B1
SuperSOT™-6
Mark: .2G
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings*
Sy
Fairchild Semiconductor
PDF
FMBA0656
NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount PackageFMBA0656
Discrete Power & Signal Technologies
FMBA0656
C2 E1 C1 Package: SuperSOT-6 Device Marking: .003 Note: The " . " (dot) signifies Pin 1 B2 E2 B1 Transistor 1 is NPN device, transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package
This device was
Fairchild Semiconductor
PDF
FMBA06
NPN Multi-Chip General Purpose AmplifierFMBA06
Discrete POWER & Signal Technologies
FMBA06
C2 E1 C1
B2 E2
pin #1 B1
SuperSOT™-6
Mark: .1G
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings*
Sy
Fairchild Semiconductor
PDF