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Preliminary FM3808 256Kb Bytewide FRAM w/ Real-Time Clock Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,752 x 8 bits • High Endurance 100 Billion (1011) Read/Writes • 10 year Data Retention • NoDelay™ Writes • 70 ns Access Time/ 130 ns Cycle Time • Built-in Low VDD
Preliminary FM3808 256Kb Bytewide FRAM w/ Real-Time Clock Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,752 x 8 bits • High Endurance 100 Billion (1011) Read/Writes • 10 year Data Retention • NoDelay™ Writes • 70 ns Access Time/ 130 ns Cycle Time • Built-in Low VDD
Preliminary FM3808 256Kb Bytewide FRAM w/ Real-Time Clock Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,752 x 8 bits • High Endurance 100 Billion (1011) Read/Writes • 10 year Data Retention • NoDelay™ Writes • 70 ns Access Time/ 130 ns Cycle Time • Built-in Low VDD
Chip Schottky Barrier Diodes FM320-B THRU FM3100-B Silicon epitaxial planer type Formosa MS SMB 0.213(5.4) 0.197(5.0) 0.016(0.4) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applic
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FM320 THRU FM3100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 3.0 Amperes FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weigh
Chip Schottky Barrier Diodes FM320 THRU FM3100 Silicon epitaxial planer type Formosa MS SMC 0.276(7.0) 0.260(6.6) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applicatio
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