FM250
Formosa MS
Silicon epitaxial planer typeChip Schottky Barrier Diodes
FM220 THRU FM2100
Silicon epitaxial planer type
Formosa MS
SMA
0.185(4.8) 0.177(4.4) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding
FM250
Rectron Semiconductor
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes)RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FM220 THRU FM2100
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes
FEATURES
* * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded c
FM250-C
Formosa MS
(FM2xx-C) Chip Schottky Barrier DiodesChip Schottky Barrier Diodes
FM220-C THRU FM2100-C
Silicon epitaxial planer type
Formosa MS
SMA
0.185(4.8) 0.177(4.4) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M ol
FM250-M
Formosa MS
Silicon epitaxial planer typeChip Schottky Barrier Diodes
FM220-M THRU FM2100-M
Silicon epitaxial planer type
Formosa MS
SOD-123
0.161(4.1) 0.146(3.7) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy
FM25040
Ramtron International
4Kb FRAM Serial Memory
FM25040
4Kb FRAM Serial Memory Features
4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 85° C • NoDelay™ write • A
FM25040A
Ramtron International
4Kb FRAM Serial Memory
FM25040A
4Kb FRAM Serial Memory Features
4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 45 year Data Retention • NoDelay™ Writes • Advanced
FM25040B
Cypress Semiconductor
4-Kbit (512 x 8) Serial (SPI) Automotive F-RAMFM25040B
4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM
4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM
Features
■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 10 trillion (1013) read/writes ❐ 121-y