FM24C16
Fudan
2-Wire Serial EEPROMFM24C02/04(1)/08(2)/16 2-Wire Serial EEPROM
Data Sheet
May. 2008
Note: 1. FM24C04 not recommend for new design, please refer to FM24C04A datasheet.. 2. FM24C08 not recommend for new design please refer to FM24C08A datasheet.. Data Sheet
FM24C02/04/08/16 2-wr
FM24C16A
Ramtron
16Kb FRAM Serial MemoryFM24C16A
16Kb FRAM Serial Memory Features
16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance (1012) Read/Write Cycles • 45 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Fas
FM24C16B
Cypress Semiconductor
16-Kbit (2K x 8) Serial (I2C) F-RAMFM24C16B
16-Kbit (2K × 8) Serial (I2C) F-RAM
16-Kbit (2K × 8) Serial (I2C) F-RAM
Features
■ 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (S
FM24C16B
Ramtron
16Kb Serial 5V F-RAM Memorywww.DataSheet.co.kr
Preliminary
FM24C16B
16Kb Serial 5V F-RAM Memory Features
16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance (1012) Read/Write Cycles 38 year Data Retention NoDelay™ Writes Advanced High
FM24C16B
Fudan
2-Wire Serial EEPROMFM24C02B/04B/08B/16B 2-Wire Serial EEPROM
Data Sheet
May. 2011
Data Sheet
FM24C02B/04B/08B/16B 2-Wire Serial EEPROM Ver 1.9 1
INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS
FM24C16C
Ramtron
16Kb Serial 5V F-RAM Memorywww.DataSheet.co.kr
Preliminary
FM24C16C
16Kb Serial 5V F-RAM Memory Features
16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance (1012) Read/Write Cycles 36 year Data Retention at +75C NoDelay™ Writes Ad
FM24C16U
Fairchild Semiconductor
16K-Bit Standard 2-Wire Bus Interface Serial EEPROMFM24C16U/17U – 16K-Bit Standard 2-Wire Bus Interface Serial EEPROM
August 2000
FM24C16U/17U – 16K-Bit Standard 2-Wire Bus Interface Serial EEPROM
General Description
The FM24C16U/17U devices are 16,384 bits of CMOS nonvolatile electrically erasable memor