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Chip Schottky Barrier Diodes FM120-M THRU FM1100-M Silicon epitaxial planer type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted ap
FM1808B 256-Kbit (32 K × 8) Bytewide F-RAM Memory 256-Kbit (32 K × 8) Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and
FM120-N THRU FM1100-N CHIP SCHOTTKY BARRIER RECTIFIER 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V SOD-323 0.106 (2.7) 0.091 (2.3) 0.012(0.3) Typ. 0.057 (1.45) 0.041 (1.05) 0.047 (1.2) 0.031 (0.8) 0.016(0.4) Typ. 0.016(0.4) Typ. FEATURES • Batch process design, excellent power di
Chip Schottky Barrier Diodes FM120-M H THRU FM1100-M H Silicon epitaxial planer type Formosa MS 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted appli
Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applicati
www.partnumber.co.kr Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay™ Writes • Advanced High-Reliability Ferroele
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