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SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Product Information FLM5964-4F/001 Part Number Class Outline / Package Code Frequency f (GHz) 2tone test lM3 Typ. (dBc) 2tone test @Pout S.C.L. (dBm) P1dB Typ. (dBm) G1db.Typ (dB) η add Typ.(%) VDS Typ.(V) IDS (DC) Typ. (mA) IDS (RF) Typ. (mA) Rth Typ.(°C
FLM5964-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DES
wEudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition m C-Band Internally Matched FET o FEATURES .
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FLM5964-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=47.0dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=39%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-45F is a power GaAs F
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