Datasheet FLM1415-8F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FLM1415-8F	Ku-Band Internally Matched FET FLM1415-8F Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=39.0dBm(Typ.) •High Gain: G1dB=5.0dB(Typ.) •High PAE: ηadd=25%(Typ.) •Broad Band: 14.5 to 15.3GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The FLM1415-8F is a power GaAs FET t	SUMITOMO

FLM1415 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FLM1415-8F	Ku-Band Internally Matched FET FLM1415-8F Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=39.0dBm(Typ.) •High Gain: G1dB=5.0dB(Typ.) •High PAE: ηadd=25%(Typ.) •Broad Band: 14.5 to 15.3GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The FLM1415-8F i	SUMITOMO
FLM1415-3F	Internally Matched FET FLM1415-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 34.5dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -46dBc@Po = 23.5dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50�	Eudyna
FLM1415-6F	Internally Matched FET FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50�	Eudyna

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