|
FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Seale
FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=26%(Typ.) ・Broad Band: 14.0~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1414-15F is a power GaAs FE
FLM1414-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 26% (Typ.) Low IM3 = -46dBc@Po = 26.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Seale
FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Seale
FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1414-12F is a powe
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |