파트넘버.co.kr FLM0910-8F 데이터시트 검색

FLM0910-8F 전자부품 데이터시트



FLM0910-8F 전자부품 회로 및
기능 검색 결과



FLM0910-8F  

SUMITOMO
SUMITOMO

FLM0910-8F

X / Ku-Band Internally Matched FET

FLM0910-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zou




관련 부품 FLM0910- 상세설명

FLM0910-3F  

  
X / Ku-Band Internally Matched FET

FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM0910-3F is



SUMITOMO
SUMITOMO

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FLM0910-15F  

  
X-Band Internally Matched FET

FLM0910-15F X-Band Internally Matched FET FEATURES •E High Output Power: P1dB=42.0dBm(Typ.) •E High Gain: G1dB=7.5dB(Typ.) •E High PAE: ηadd=32%(Typ.) •E Broad Band: 9.5~10.5GHz •E Impedance Matched Zin/Zout = 50Ω Hermetically Ε Sealed Package DESCRIPTION The FLM0910-15F is a power GaA



SUMITOMO
SUMITOMO

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FLM0910-12F  

  
X-Band Internally Matched FET

FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that



ETC
ETC

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FLM0910-4F  

  
X / Ku-Band Internally Matched FET

FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM0910-4F is



SUMITOMO
SUMITOMO

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FLM0910-25F  

  
X-Band Internally Matched FET

FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that



SUMITOMO
SUMITOMO

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FLM0910-12F  

  
X-Band Internally Matched FET

FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that



SUMITOMO
SUMITOMO

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