FLK057WG
Eudyna Devices
Ku Band Power GaAs FETFLK057WG
X, Ku Band Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK057WG is a power GaAs FET th
FLK057XV
GaAs FET & HEMT ChipsFLK057XV
GaAs FET & HEMT Chips FEATURES
• • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability
Source
Drain
Drain
DESCRIPTION
The FLK057XV chip is a power GaAs FET that is designed for general purpose applications in th
Eudyna Devices
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