FLK017XP
Eudyna Devices
GaAs FET & HEMT ChipsFLK017XP
GaAs FET & HEMT Chips FEATURES
• • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability
Source Gate
Drain
DESCRIPTION
The FLK017XP chip is a power GaAs FET that is designed
FLK017WF
Ku Band Power GaAs FETFLK017WF
X, Ku Band Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK017WF is a power GaAs FET that is designed for general purpose appli
Eudyna Devices
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