FGF65A4L
Sanken
Trench Field Stop IGBTVCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A4L, MGF65A4L, FGF65A4L
Data Sheet
Description
KGF65A4L, MGF65A4L, and FGF65A4L are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves
FGF65A4H
Trench Field Stop IGBTVCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A4H, MGF65A4H, FGF65A4H
Data Sheet
Description
KGF65A4H, MGF65A4H, and FGF65A4H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss
Sanken
PDF
FGF65A3L
Trench Field Stop IGBTVCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3L, MGF65A3L, FGF65A3L
Data Sheet
Description
KGF65A3L, MGF65A3L, and FGF65A3L are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves low saturation voltage and switching lo
Sanken
PDF
FGF65A3H
Trench Field Stop IGBTVCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3H, MGF65A3H, FGF65A3H
Data Sheet
Description
KGF65A3H, MGF65A3H, and FGF65A3H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss
Sanken
PDF