FGA20S125P
Fairchild Semiconductor
IGBTFGA20S125P — 1250 V, 20 A Shorted-anode IGBT
November 2014
FGA20S125P
1250 V, 20 A Shorted-anode IGBT
Features
• High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.0 V @ IC = 20 A • High Input Impedance • RoHS Compliant
Applications
• I
FGA20S120M
20A Shorted-Anode IGBTFGA20S120M 1200V, 20A Shorted-Anode IGBT
March 2010
FGA20S120M
1200V, 20A Shorted-Anode IGBT
Features
• High speed switching • Low saturation voltage: VCE(sat) =1.55V @ IC = 20A • High input impedance • RoHS compliant
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General Description
Using advanced Field Stop Trench and shorted-an
Fairchild Semiconductor
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