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FDZ209N May 2004 FDZ209N 60V N-Channel PowerTrench BGA MOSFET General Description Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which en
FDZ206P January 2003 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in
FDZ2040L — Integrated Load Switch June 2013 FDZ2040L Integrated Load Switch Features Optimized for Low-Voltage Core ICs in Portable Systems Very Small Package Dimension: WL-CSP 0.8 X 0.8 X 0.5 mm3 Current = 1.2 A, VIN max. = 4 V Current = 2 A, VIN max. = 4 V (Pulsed) RDS(ON)
FDZ203N March 2003 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in pac
FDZ202P November 1999 ADVANCE INFORMATION FDZ202P P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodie
FDZ208P January 2003 FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET Features • –12.5 A, –30 V. RDS(ON) = 10.5 mΩ @ VGS = –10 V RDS(ON) = 16.5 mΩ @ VGS = –4.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.80 mm height wh
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