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FDZ204P 전자부품 데이터시트



FDZ204P 전자부품 회로 및
기능 검색 결과



FDZ204P  

Fairchild Semiconductor
Fairchild Semiconductor

FDZ204P

P-Channel 2.5V Specified PowerTrench

FDZ204P March 2003 FDZ204P P-Channel 2.5V Specified PowerTrench   BGA MOSFET Features • –4.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V RDS(ON) = 75 mΩ @ VGS = –2.5 V • Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 �




관련 부품 FDZ20 상세설명

FDZ209N  

  
60V N-Channel PowerTrench BGA MOSFET

FDZ209N May 2004 FDZ209N 60V N-Channel PowerTrench BGA MOSFET   General Description Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which en



Fairchild Semiconductor
Fairchild Semiconductor

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FDZ206P  

  
P-Channel 2.5V Specified PowerTrench

FDZ206P January 2003 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET   General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in



Fairchild Semiconductor
Fairchild Semiconductor

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FDZ2040L  

  
Integrated Load Switch

FDZ2040L — Integrated Load Switch June 2013 FDZ2040L Integrated Load Switch Features  Optimized for Low-Voltage Core ICs in Portable Systems  Very Small Package Dimension: WL-CSP 0.8 X 0.8 X 0.5 mm3  Current = 1.2 A, VIN max. = 4 V  Current = 2 A, VIN max. = 4 V (Pulsed)  RDS(ON)



Fairchild Semiconductor
Fairchild Semiconductor

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FDZ203N  

  
N-Channel 2.5V Specified PowerTrench BGA MOSFET

FDZ203N March 2003 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in pac



Fairchild Semiconductor
Fairchild Semiconductor

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FDZ202P  

  
P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET

FDZ202P November 1999 ADVANCE INFORMATION FDZ202P P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodie



Fairchild Semiconductor
Fairchild Semiconductor

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FDZ208P  

  
P-Channel 30 Volt PowerTrench

FDZ208P January 2003 FDZ208P P-Channel 30 Volt PowerTrench   BGA MOSFET Features • –12.5 A, –30 V. RDS(ON) = 10.5 mΩ @ VGS = –10 V RDS(ON) = 16.5 mΩ @ VGS = –4.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.80 mm height wh



Fairchild Semiconductor
Fairchild Semiconductor

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