FDU8586
Fairchild Semiconductor
N-Channel PowerTrench MOSFET
FDD8586/FDU8586 N-Channel PowerTrench® MOSFET
January 2007
FDD8586/FDU8586 N-Channel PowerTrench® MOSFET
20V, 35A, 5.5mΩ Features General Description
Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A Max rDS(on) = 8.5mΩ at VGS = 4
FDU8580
N-Channel MOSFETFDD8580/FDU8580 N-Channel PowerTrench® MOSFET
July 2006
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
20V, 35A, 9mΩ Features General Description
Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V Low g
Fairchild Semiconductor
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