FDU6N50
Fairchild Semiconductor
N-Channel MOSFETFDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
FDD6N50 / FDU6N50
N-Channel UniFETTM MOSFET
500 V, 6 A, 900 mΩ
Features
• RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 12.8 nC) • Low Crss (Typ. 9 pF) • 100% Avalanche Tested
FDU6N20
MOSFET ( Transistor )FDD6N20 / FDU6N20 N-Channel MOSFET
FDD6N20 / FDU6N20
N-Channel MOSFET
200V, 4.5A, 0.8Ω
Features
• RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A • Low gate charge ( Typ. 4.7nC ) • Low Crss ( Typ. 6.3pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS comp
Fairchild Semiconductor
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FDU6N25
N-Channel MOSFETFDD6N25 / FDU6N25 250V N-Channel MOSFET
February 2007
FDD6N25 / FDU6N25
250V N-Channel MOSFET Features
• 4.4A, 250V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
UniFET
Fairchild Semiconductor
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