Datasheet FDT86246 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDT86246	MOSFET ( Transistor ) FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely	Fairchild Semiconductor

FDT86 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDT86106LZ	MOSFET ( Transistor ) FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features General Description January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance tr	Fairchild Semiconductor
FDT86256	MOSFET ( Transistor ) FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A Very low Qg and Qgd compared to competing trench technologies	Fairchild Semiconductor
FDT86246	MOSFET ( Transistor ) FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench tech	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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