FDT439N
Fairchild Semiconductor
N-Channel 2.5V Specified EnhancementMode Field Effect TransistorFDT439N
June 1999
FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technolog
FDT434P
P-Channel 2.5V Specified PowerTrench MOSFETFDT434P
January 2000
FDT434P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low
Fairchild Semiconductor
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