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FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET tm -20V, -4.9A, 46mΩ Features General Description Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A Low
May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provi
May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provi
FDS9933 January 2004 FDS9933 Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive vo
FDS9933A November 1998 FDS9933A Dual P-Channel 2.5V Specified PowerTrench™ MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet mai
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