파트넘버.co.kr FDS8934A 데이터시트 검색

FDS8934A 전자부품 데이터시트



FDS8934A 전자부품 회로 및
기능 검색 결과



FDS8934A  

Fairchild Semiconductor
Fairchild Semiconductor

FDS8934A

Dual P-Channel Enhancement Mode Field Effect Transistor

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density




관련 부품 FDS893 상세설명

FDS8935  

  
MOSFET ( Transistor )

FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ November 2010 Features General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A „ High performance trench technol



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDS8936S  

  
Dual N-Channel Enhancement Mode Field Effect Transistor

August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to pr



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDS8936  

  
Dual N-Channel Enhancement Mode Field Effect Transistor

May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDS8934  

  
Dual P-Channel Enhancement Mode Field Effect Transistor

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDS8936A  

  
Dual N-Channel Enhancement Mode Field Effect Transistor

May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim



Fairchild Semiconductor
Fairchild Semiconductor

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처