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FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ November 2010 Features General Description Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technol
August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to pr
May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim
May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim
May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim
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