FDS86252
Fairchild Semiconductor
MOSFET ( Transistor )FDS86252 N-Channel Power Trench® MOSFET
April 2011
FDS86252
N-Channel Power Trench® MOSFET
150 V, 4.5 A, 55 mΩ
Features
General Description
Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A High perfo
FDS86240
MOSFET ( Transistor )FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET
www.onsemi.com
FDS86240
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 7.5 A, 19.8 mΩ
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS =
Fairchild Semiconductor
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FDS86242
N-Channel PowerTrench MOSFETFDS86242 N-Channel PowerTrench® MOSFET
August 2010
FDS86242
N-Channel PowerTrench® MOSFET
150 V, 4.1 A, 67 mΩ
Features
General Description
Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technology for extremely lo
Fairchild Semiconductor
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