FDS86141
Fairchild Semiconductor
MOSFET ( Transistor )FDS86141 N-Channel Power Trench® MOSFET
May 2015
FDS86141
N-Channel Power Trench® MOSFET
100 V, 7 A, 23 mΩ
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance
FDS86140
MOSFET ( Transistor )FDS86140 N-Channel PowerTrench® MOSFET
March 2011
FDS86140
N-Channel PowerTrench® MOSFET
100 V, 11.2 A, 9.8 mΩ
Features
General Description
Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A High performance trench technologh for extremely l
Fairchild Semiconductor
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FDS86106
MOSFET ( Transistor )FDS86106 N-Channel Power Trench® MOSFET
July 2011
FDS86106
N-Channel Power Trench® MOSFET
100 V, 3.4 A, 105 mΩ
Features
General Description
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely
Fairchild Semiconductor
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