Datasheet FDS86106 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDS86106	MOSFET ( Transistor ) FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ Features General Description Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely	Fairchild Semiconductor

FDS86 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDS8672S	N-Channel MOSFET FDS8672S N-Channel PowerTrench® SyncFET™ December 2007 FDS8672S N-Channel PowerTrench SyncFET 30V, 18A, 4.8mΩ Features Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A Includes SyncFET Schottky body diode High performan	Fairchild Semiconductor
FDS86242	N-Channel PowerTrench MOSFET FDS86242 N-Channel PowerTrench® MOSFET August 2010 FDS86242 N-Channel PowerTrench® MOSFET 150 V, 4.1 A, 67 mΩ Features General Description Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technol	Fairchild Semiconductor
FDS8690	N-Channel PowerTrench MOSFET FDS8690 N-Channel PowerTrench® MOSFET January 2006 FDS8690 N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional s	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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