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FDS6692 September 2003 FDS6692 30V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate c
FDS6688S March 2004 FDS6688S 30V N-Channel PowerTrench SyncFET™ General Description The FDS6688S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and
FDS6673BZ_F085 P-Channel PowerTrench® MOSFET PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET -30V, -14.5A, 7.8mΩ July 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-stat
FDS6699S 30V N-Channel PowerTrench® SyncFET™ FDS6699S 30V N-Channel PowerTrench® SyncFET™ December 2012 Features ■ 21 A, 30 V Max RDS(ON) = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky body diode ■ High performance trench technology for extrem
FDS6670S August 2001 FDS6670S 30V N-Channel PowerTrench® SyncFET ™ General Description The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) an
FDS6692A N-Channel PowerTrench® MOSFET January 2010 FDS6692A N-Channel PowerTrench® MOSFET 30V, 9A, 11.5mΩ Features RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A High performance trench technology for extremely low RDS(ON) Low gate charge Genera
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