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FDS4435A  

Fairchild Semiconductor
Fairchild Semiconductor

FDS4435A

P-Channel Logic Level PowerTrenchMOSFET

FDS4435A October 2001 FDS4435A P-Channel Logic Level PowerTrench® MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-st




관련 부품 FDS443 상세설명

FDS4435BZ_F085  

  
P-Channel PowerTrench MOSFET

FDS4435BZ_F085 P-Channel PowerTrench® MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level



Fairchild Semiconductor
Fairchild Semiconductor

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FDS4435BZ  

  
P-Channel PowerTrench MOSFET

FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.8KV



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDS4435  

  
P-Channel PowerTrench MOSFET

FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage rati



Fairchild Semiconductor
Fairchild Semiconductor

PDF




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