FDS4435A
Fairchild Semiconductor
P-Channel Logic Level PowerTrenchMOSFETFDS4435A
October 2001
FDS4435A
P-Channel Logic Level PowerTrench® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-st
FDS4435BZ_F085
P-Channel PowerTrench MOSFETFDS4435BZ_F085 P-Channel PowerTrench® MOSFET
FDS4435BZ_F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level
Fairchild Semiconductor
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FDS4435BZ
P-Channel PowerTrench MOSFETFDS4435BZ P-Channel PowerTrench® MOSFET
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV
Fairchild Semiconductor
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FDS4435
P-Channel PowerTrench MOSFETFDS4435
October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage rati
Fairchild Semiconductor
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