FDS2670
Fairchild Semiconductor
200V N-Channel PowerTrench MOSFETFDS2670
June 2000 PRELIMINARY
FDS2670
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM c
FDS2672
N-Channel UltraFET
FDS2672 N-Channel UltraFET Trench® MOSFET
August 2006
FDS2672 N-Channel UltraFET Trench® MOSFET
200V, 3.9A, 70mΩ
Features
Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A Fast switching speed High performance trench techn
Fairchild Semiconductor
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