FDS2572
Fairchild Semiconductor
150V/ 0.047 Ohms/ 4.9A/ N-Channel UltraFET Trench MOSFETFDS2572
October 2001
FDS2572
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET
General Description
® UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low tot
FDS2570
150V N-Channel PowerTrench MOSFETFDS2570
June 2000 PRELIMINARY
FDS2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster
Fairchild Semiconductor
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FDS2582
N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66mFDS2582
September 2002
FDS2582
N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ
Features
• r DS(ON) = 57mΩ (Typ.), VGS = 10V, ID = 4.1A • Qg(tot) = 19nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pul
Fairchild Semiconductor
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