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FDB3682 / FDP3682 September 2002 FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ Features • r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
FDP3672 September 2003 FDP3672 N-Channel PowerTrench® MOSFET 105V, 41A, 33mΩ Features • r DS(ON) = 25mΩ (Typ.), VGS = 10V, ID = 41A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse
FDB3652 / FDP3652 / FDI3652 October 2002 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ Features • r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A • Qg(tot) = 41nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Re
FDP3651U — N-Channel PowerTrench® MOSFET October 2013 FDP3651U N-Channel PowerTrench® MOSFET 100 V, 80 A, 18 mΩ Features • RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • High Performance Trench Technology for Extremely Low RDS(on) • Low Miller Charge • UIS Capability (Single Puls
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