FDP047N10
Fairchild Semiconductor
N-Channel PowerTrench MOSFETFDP047N10 N-Channel PowerTrench® MOSFET
August 2010
FDP047N10
Description
N-Channel PowerTrench® MOSFET
100V, 164A, 4.7mΩ General Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been esp
FDP047N08
N-Channel PowerTrench MOSFETFDP047N08 N-Channel PowerTrench® MOSFET
March 2008
FDP047N08
N-Channel
Features
• RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS
Fairchild Semiconductor
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