FDN86246
Fairchild Semiconductor
MOSFET ( Transistor )FDN86246 N-Channel PowerTrench® MOSFET
December 2010
FDN86246
N-Channel PowerTrench® MOSFET
150 V, 1.6 A, 261 m:
Features
General Description
Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A High perf
FDN86246
TY Semiconductor
N-Channel MOSFETSMD Type
Product specification
FDN86246
150 V, 1.6 A, 261 m: Features
Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A High performance trench technology for extremely low rDS(on) High power and current