파트넘버.co.kr FDN357N 데이터시트 검색

FDN357N 전자부품 데이터시트



FDN357N 전자부품 회로 및
기능 검색 결과



FDN357N  

Fairchild Semiconductor
Fairchild Semiconductor

FDN357N

N-Channel Logic Level Enhancement Mode Field Effect Transistor

March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno




관련 부품 FDN35 상세설명

FDN359BN  

  
N-Channel Logic Level PowerTrench MOSFET

FDN359BN January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superio



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDN352AP  

  
PowerTrench MOSFET

FDN352AP Single P-Channel, PowerTrench® MOSFET August 2005 FDN352AP Single P-Channel, PowerTrench® MOSFET Features ■ –1.3 A, –30V –1.1 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDN359AN  

  
N-Channel Logic Level PowerTrenchTM MOSFET

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching perform



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDN358P  

  
P-Channel Logic Level Enhancement Mode Field Effect Transistor

March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDN359  

  
N-Channel Logic Level PowerTrenchTM MOSFET

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching perform



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDN358  

  
P-Channel Logic Level Enhancement Mode Field Effect Transistor

March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is



Fairchild Semiconductor
Fairchild Semiconductor

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처