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FDMS8622 전자부품 데이터시트



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FDMS8622  

Fairchild Semiconductor
Fairchild Semiconductor

FDMS8622

N-Channel MOSFET

FDMS8622 N-Channel PowerTrench® MOSFET July 2011 FDMS8622 N-Channel Power Trench® MOSFET 100 V, 16.5 A, 56 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been op




관련 부품 FDMS86 상세설명

FDMS86202  

  
MOSFET ( Transistor )

FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 64 A, 7.2 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A „ Advan



Fairchild Semiconductor
Fairchild Semiconductor

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FDMS8672S  

  
N-Channel PowerTrench SyncFET

FDMS8672S N-Channel PowerTrench® SyncFETTM February 2007 FDMS8672S N-Channel PowerTrench® SyncFETTM 30V, 35A, 5mΩ Features General Description „ Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A „ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A „ Advanced Package and Silicon combination for low rD



Fairchild Semiconductor
Fairchild Semiconductor

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FDMS8662  

  
N-Channel PowerTrench MOSFET

www.partnumber.co.kr FDMS8662 N-Channel PowerTrench® MOSFET November 2007 FDMS8662 N-Channel PowerTrench MOSFET 30V, 49A, 2.0mΩ Features „ Max rDS(on) = 2.0mΩ at VGS = 10V, ID = 28A „ Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 24A „ Advanced Package and Silicon combination for low rDS(on) a



Fairchild Semiconductor
Fairchild Semiconductor

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FDMS86568_F085  

  
MOSFET ( Transistor )

FDMS86568_F085 N-Channel PowerTrench® MOSFET FDMS86568_F085 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ December 2014 Features „ Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q1



Fairchild Semiconductor
Fairchild Semiconductor

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FDMS86550ET60  

  
MOSFET ( Transistor )

FDMS86550ET60 N-Channel PowerTrench® MOSFET January 2015 FDMS86550ET60 N-Channel PowerTrench® MOSFET 60 V, 245 A, 1.65 mΩ Features General Description „ Extended TJ rating to 175°C „ Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A „ Advanc



Fairchild Semiconductor
Fairchild Semiconductor

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FDMS86550  

  
MOSFET ( Transistor )

FDMS86550 N-Channel PowerTrench® MOSFET March 2015 FDMS86550 N-Channel PowerTrench® MOSFET 60 V, 234 A, 1.65 mΩ Features General Description „ Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A „ Advanced Package and Silicon combination for low



Fairchild Semiconductor
Fairchild Semiconductor

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