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FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 64 A, 7.2 mΩ Features Shielded Gate MOSFET Technology Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A Advan
FDMS8672S N-Channel PowerTrench® SyncFETTM February 2007 FDMS8672S N-Channel PowerTrench® SyncFETTM 30V, 35A, 5mΩ Features General Description Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A Advanced Package and Silicon combination for low rD
www.partnumber.co.kr FDMS8662 N-Channel PowerTrench® MOSFET November 2007 FDMS8662 N-Channel PowerTrench MOSFET 30V, 49A, 2.0mΩ Features Max rDS(on) = 2.0mΩ at VGS = 10V, ID = 28A Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 24A Advanced Package and Silicon combination for low rDS(on) a
FDMS86568_F085 N-Channel PowerTrench® MOSFET FDMS86568_F085 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ December 2014 Features Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q1
FDMS86550ET60 N-Channel PowerTrench® MOSFET January 2015 FDMS86550ET60 N-Channel PowerTrench® MOSFET 60 V, 245 A, 1.65 mΩ Features General Description Extended TJ rating to 175°C Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A Advanc
FDMS86550 N-Channel PowerTrench® MOSFET March 2015 FDMS86550 N-Channel PowerTrench® MOSFET 60 V, 234 A, 1.65 mΩ Features General Description Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A Advanced Package and Silicon combination for low
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