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Datasheet FDMS86200 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDMS86200 | N-Channel MOSFET FDMS86200 N-Channel Power Trench® MOSFET
November 2012
FDMS86200
N-Channel Power Trench® MOSFET
150 V, 49 A, 18 mΩ
Features
Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A Advanced Package and Silicon combination for low rDS(on) and high eff |
 Fairchild Semiconductor |
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| 1 | FDMS86200DC | MOSFET ( Transistor ) FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET
July 2015
FDMS86200DC
N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET
150 V, 40 A, 17 mΩ
Features
General Description
Shielded Gate MOSFET Technology Dual CoolTM Top Side Cooling PQFN package
Max rDS(o |
Fairchild Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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