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Datasheet FDMS86150 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDMS86150 | N-Channel MOSFET FDMS86150 N-Channel PowerTrench® MOSFET
October 2012
FDMS86150
N-Channel PowerTrench® MOSFET
100 V, 60 A, 4.85 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the o |
 Fairchild Semiconductor |
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| 1 | FDMS86150ET100 | MOSFET ( Transistor ) FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET
FDMS86150ET100
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 128 A, 4.85 mΩ
January 2015
Features
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A Max rDS(on |
Fairchild Semiconductor |
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