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FDMS86163P P-Channel PowerTrench® MOSFET FDMS86163P P-Channel PowerTrench® MOSFET -100 V, -50 A, 22 mΩ Features Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg
FDMS86152 N-Channel PowerTrench® MOSFET FDMS86152 N-Channel PowerTrench® MOSFET 100 V, 45 A, 6 mΩ February 2013 Features General Description Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A Advanced Package and Silicon combination for low r
FDMS86105 N-Channel PowerTrench® MOSFET January 2011 FDMS86105 N-Channel PowerTrench® MOSFET 100 V, 26 A, 34 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-s
FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86181 December 2015 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 124 A, 4.2 mΩ Features Shielded Gate MOSFET Technology Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ADD
FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 49 A, 8 mΩ October 2014 Features General Description Shielded Gate MOSFET Technology Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 11 mΩ at VGS = 4.5 V,
FDMS86101A N-Channel PowerTrench® MOSFET April 2012 FDMS86101A N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-s
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