파트넘버.co.kr FDMS86104 데이터시트 검색

FDMS86104 전자부품 데이터시트



FDMS86104 전자부품 회로 및
기능 검색 결과



FDMS86104  

Fairchild Semiconductor
Fairchild Semiconductor

FDMS86104

N-Channel MOSFET

FDMS86104 N-Channel PowerTrench® MOSFET October 2012 FDMS86104 N-Channel PowerTrench® MOSFET 100 V, 16 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been




관련 부품 FDMS861 상세설명

FDMS86163P  

  
P-Channel PowerTrench MOSFET

FDMS86163P P-Channel PowerTrench® MOSFET FDMS86163P P-Channel PowerTrench® MOSFET -100 V, -50 A, 22 mΩ Features „ Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A „ Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A „ Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDMS86152  

  
N-Channel PowerTrench MOSFET

FDMS86152 N-Channel PowerTrench® MOSFET FDMS86152 N-Channel PowerTrench® MOSFET 100 V, 45 A, 6 mΩ February 2013 Features General Description „ Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A „ Advanced Package and Silicon combination for low r



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDMS86105  

  
N-Channel Power Trench MOSFET

FDMS86105 N-Channel PowerTrench® MOSFET January 2011 FDMS86105 N-Channel PowerTrench® MOSFET 100 V, 26 A, 34 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-s



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDMS86181  

  
N-Channel Shielded Gate PowerTrench MOSFET

FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86181 December 2015 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 124 A, 4.2 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A „ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A „ ADD



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDMS86103L  

  
N-Channel Shielded Gate PowerTrench MOSFET

FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 49 A, 8 mΩ October 2014 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V,



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDMS86101A  

  
N-Channel MOSFET

FDMS86101A N-Channel PowerTrench® MOSFET April 2012 FDMS86101A N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-s



Fairchild Semiconductor
Fairchild Semiconductor

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처