FDMS7578 전자부품 데이터시트

FDMS7580 N-Channel Power Trench® MOSFET October 2014 FDMS7580 N-Channel Power Trench® MOSFET 25 V, 7.5 mΩ Features General Description „ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A „ Advanced Package and Silicon combination for low

FDMS7572S N-Channel PowerTrench®SyncFET October 2014 FDMS7572S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Max rDS(on) = 2.9 mΩ at VGS = 10 V, ID = 23 A „ Max rDS(on) = 4.2 mΩ at VGS = 4.5 V, ID = 18 A „ Advanced Package and Silicon combination for low rDS(on) and high

FDMS7556S N-Channel Power Trench® SyncFETTM October 2014 FDMS7556S N-Channel PowerTrench® SyncFETTM 25 V, 130 A, 1.2 mΩ Features General Description „ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 35 A „ Max rDS(on) = 1.65 mΩ at VGS = 4.5 V, ID = 31 A „ Advanced Package and Silicon combinati

FDMS7570S N-Channel PowerTrench®SyncFET December 2009 FDMS7570S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.95 mΩ Features „ Max rDS(on) = 1.95 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.85 mΩ at VGS = 4.5 V, ID = 22 A „ Advanced Package and Silicon combination for low rDS(on) and

FDMS7558S N-Channel PowerTrench®SyncFET December 2009 FDMS7558S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.25 mΩ Features „ Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 1.75 mΩ at VGS = 4.5 V, ID = 28 A „ Advanced Package and Silicon combination for low rDS(on) and

FDMS7560S N-Channel PowerTrench® SyncFETTM August 2011 FDMS7560S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.45 mΩ Features General Description The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been