파트넘버.co.kr FDMS3660S 데이터시트 검색

FDMS3660S 전자부품 데이터시트



FDMS3660S 전자부품 회로 및
기능 검색 결과



FDMS3660S  

Fairchild Semiconductor
Fairchild Semiconductor

FDMS3660S

PowerTrench Power Stage

FDMS3660S PowerTrench® Power Stage FDMS3660S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.




관련 부품 FDMS366 상세설명

FDMS3668S  

  
MOSFET ( Transistor )

FDMS3668S PowerTrench® Power Stage FDMS3668S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDMS3662  

  
MOSFET ( Transistor )

FDMS3662 N-Channel Power Trench® MOSFET November 2014 FDMS3662 N-Channel Power Trench® MOSFET 100V, 39A, 14.8mΩ Features General Description „ Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design This N-Chan



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDMS3660AS  

  
MOSFET ( Transistor )

FDMS3660AS PowerTrench® Power Stage FDMS3660AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDMS3664S  

  
MOSFET ( Transistor )

FDMS3664S PowerTrench® Power Stage FDMS3664S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 2.6



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDMS3669S  

  
MOSFET ( Transistor )

FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A „ Max r



Fairchild Semiconductor
Fairchild Semiconductor

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처