FDMS3606AS
Fairchild Semiconductor
MOSFET ( Transistor )FDMS3606AS PowerTrench® Power Stage
FDMS3606AS
PowerTrench® Power Stage
September 2011
30 V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5
FDMS3606S
Asymmetric Dual N-Channel MOSFETFDMS3606S PowerTrench® Power Stage
FDMS3606S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A Max rD
Fairchild Semiconductor
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