Datasheet FDMD8280 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDMD8280	MOSFET ( Transistor ) FDMD8280 Dual N-Channel PowerTrench® MOSFET October 2014 FDMD8280 Dual N-Channel Power Trench® MOSFET 80 V, 40 A, 8.2 mΩ Features General Description Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 11 A Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.5 A Ideal for flexible layout in primary sid	Fairchild Semiconductor

FDMD8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDMD82100	MOSFET ( Transistor ) FDMD82100 Dual N-Channel PowerTrench® MOSFET June 2014 FDMD82100 Dual N-Channel Power Trench® MOSFET 100 V, 25 A, 19 mΩ Features General Description Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A Ideal for flexible layo	Fairchild Semiconductor
FDMD86100	MOSFET ( Transistor ) FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET February 2015 FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 39 A, 10.5 mΩ Features General Description Common source configuration to eliminate PCB routing Large source pad on bottom of p	Fairchild Semiconductor
FDMD85100	MOSFET ( Transistor ) FDMD85100 Dual N-Channel PowerTrench® MOSFET September 2015 FDMD85100 Dual N-Channel PowerTrench® MOSFET Q1: 100 V, 48A, 9.9 mΩ Q2: 100 V, 48A, 9.9 mΩ Features General Description Q1: N-Channel Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 m	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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