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FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.3 mΩ Features Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 6
FDMC86340 N-Channel Shielded Gate Power Trench® MOSFET January 2014 FDMC86340 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 48 A, 6.5 mΩ Features General Description Shielded Gate MOSFET Technology Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 8.5 mΩ at VGS = 8
FDMC86320 N-Channel Power Trench® MOSFET FDMC86320 N-Channel Power Trench® MOSFET 80 V, 22 A, 11.7 mΩ June 2014 Features General Description Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A MSL1 robust package design 100% UIL Tested
FDMC86261P P-Channel PowerTrench® MOSFET June 2014 FDMC86261P P-Channel PowerTrench® MOSFET -150 V, -9 A, 160 mΩ Features Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A Very low RDS-on mid voltage P channel silicon technology optimis
FDMC86260ET150 N-Channel Power Trench® MOSFET FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ January 2015 Features General Description Extended TJ rating to 175°C Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A High
FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ January 2015 Features General Description Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9
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