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FDMC8651 전자부품 데이터시트



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FDMC8651  

Fairchild Semiconductor
Fairchild Semiconductor

FDMC8651

N-Channel Power Trench MOSFET

FDMC8651 N-Channel Power Trench® MOSFET July 2008 FDMC8651 N-Channel Power Trench® MOSFET 30 V, 20 A, 6.1 mΩ Features „ Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A „ Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A „ Low Profile - 1 mm max in Pow




관련 부품 FDMC86 상세설명

FDMC86570LET60  

  
MOSFET ( Transistor )

FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.3 mΩ Features „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 6



Fairchild Semiconductor
Fairchild Semiconductor

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FDMC86340  

  
MOSFET ( Transistor )

FDMC86340 N-Channel Shielded Gate Power Trench® MOSFET January 2014 FDMC86340 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 48 A, 6.5 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 8.5 mΩ at VGS = 8



Fairchild Semiconductor
Fairchild Semiconductor

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FDMC86320  

  
MOSFET ( Transistor )

FDMC86320 N-Channel Power Trench® MOSFET FDMC86320 N-Channel Power Trench® MOSFET 80 V, 22 A, 11.7 mΩ June 2014 Features General Description „ Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A „ Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A „ MSL1 robust package design „ 100% UIL Tested



Fairchild Semiconductor
Fairchild Semiconductor

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FDMC86261P  

  
MOSFET ( Transistor )

FDMC86261P P-Channel PowerTrench® MOSFET June 2014 FDMC86261P P-Channel PowerTrench® MOSFET -150 V, -9 A, 160 mΩ Features „ Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A „ Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A „ Very low RDS-on mid voltage P channel silicon technology optimis



Fairchild Semiconductor
Fairchild Semiconductor

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FDMC86260ET150  

  
MOSFET ( Transistor )

FDMC86260ET150 N-Channel Power Trench® MOSFET FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ January 2015 Features General Description „ Extended TJ rating to 175°C „ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A „ Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A „ High



Fairchild Semiconductor
Fairchild Semiconductor

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FDMC86160ET100  

  
MOSFET ( Transistor )

FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ January 2015 Features General Description „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9



Fairchild Semiconductor
Fairchild Semiconductor

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