FDMC86102
Fairchild Semiconductor
N-Channel Power Trench MOSFETFDMC86102 N-Channel Power Trench® MOSFET
March 2012
FDMC86102
N-Channel Power Trench® MOSFET
100 V, 20 A, 24 mΩ
Features
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33
FDMC86102L
Fairchild Semiconductor
MOSFET ( Transistor )FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET
FDMC86102L
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 18 A, 23 mΩ
June 2014
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
FDMC86102LZ
Fairchild Semiconductor
N-Channel Power Trench MOSFETFDMC86102LZ N-Channel Power Trench® MOSFET
April 2011
FDMC86102LZ
N-Channel Power Trench® MOSFET
100 V, 22 A, 24 mΩ
Features
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A HBM ESD protection level >